SOI Wafer
SOI wafer,which has a structure that SiO2 inserted between Si substrate and surface Si layer.Parasitic capacitance of transistor can be reduced therefore it's effective in improving operation speed and reducing electricity consumption.In a conventional integrated-circuit, isolation between elements are formed by reversing PN connection, however floating capacitance will be resulted between parasitic diode or substrate,as a result,signal delay or electric leakage to substrate will be occurred.In order to reduce this floating capacitance, an isolation film is formed beneath MOSFET channel, SOI is used to reduce floating capacitance.Moreover, a wafer including such an isolation film is called SOI wafer. On the other hand, a conventional wafer sometimes is called bulk silicon (or bulk wafer) to distinguish from SOI wafer.
About ICEMOS TECHNOLOGY
- We offer SOI wafer, Si-Si bonded wafer and SOI processed wafer (dielectrically-isolated wafer etc) as the exclusive agent in Japan of ICEMOS TECHNOLOGY, U.K. based producer.
- ICEMOS TECHNOLOGY has been offering world-class custom SOI solutions for more than ten years since the former BCO Technologies.
- We can response to various needs such as R&D in small volume and mass production.
Bonded SOI Wafer
Bonded SOI Wafer come in the following types.
About SOI Process
- Two types of process
Process 1
Form buried oxide on handle layer and polish bonded device layer.
Process 2
Form buried oxide on device layer and polish bonded device layer.
About Customized SOI Wafer
We offer the specification based on customer's requirement.The following specifications are available.
- Device layer
- Thickness : to thinnest 1.5um
- Buried Oxide
-
- Buried oxide up to 4um thickness directly
- More than 4um of oxide film are also available
ex) 5um (1um + 4um) Oxide film-Oxide film bonding
- Oxide film (more than 4um)
-
Buried oxide can be formed by oxide film-oxide film(SiO2+SiO2) bonding (1um + 4um) but this strength is lower than that of silicon-oxide film(Si+SiO2) bonding.
- Handle layer
-
If you would like handle layer which has less than 300um thickness, we can offer polishing.
Ex) handle layer : 325um->150um** For thickness,total thickness of SOI wafer shall be measured.We can process with target tolerance +/-2um.
- Backside polish for handle layer
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We can offer backside polishing for handle layer.For thickness,total thickness of SOI wafer shall be measured.
* Polishing device layer is also available at customer's request.
- Field oxide film process
-
- We offer field oxide film process on surface of SOI wafer.
- Other films such as nitride film and metal film formation are also available.
- Bonding strength
-
We can offer SOI wafers which has lower bonding strength between device layer and buried oxide.
In normal bonding strength, we have past experience that there was no influence on bonding boundary face after etching process for 70 minutes by 48% HF. (based on our past testing data)
- Lower bonding strength
-
We can offer SOI wafers which has lower bonding strength.
- Standard spec of
ICEMOS TECHNOLOGY, LTD. -
Size: 4inch,5inch,6 inch,8inch
http://www.icemostech.com/soi-wafers.html
About SOI processed Wafer
Cavity patterned wafer
We offer cavity processing of handle layer and buried oxide etc.
Patterned SOI wafer
Various pattern process is available as follows.
About Dielectrically-isolated Wafer
SOI wafer trench + refill process
Trench process and poly silicon refill process to SOI wafer enables the reliazation of production of dielectrically-isolated wafer.
Please check below link for detail specification.
http://www.icemostech.com/tsoi-wafers.html
Si-Si Bonding Wafer
Bonding of silicon wafers (e.g. silicon wafer having high resistivity and low resistivity) together makes it possible to produce a wafer substitute for epitaxial wafer. The characteristic thereof is that autodoping of the wafers on the bonding interface hardly occurs due to direct bonding of wafers.Depending on thickness, it can also lead to cost reduction compared with thick epi layer. Production method is as follows: two silicon wafers are bonded and device layer to be polished to target thickness. Si-Si bonding wafer (Si-Si bonded wafer) is regarded as an useful substitute with lower cost compared with thick epitaxial layer which has been used conventionally for applications such as power device and pin-diode.
About Stock sale of SOI wafer
SOI stock wafer available at ICEMOS TECHNOLOGY (UK).Please contact us for detailed specification and up-to-date stock list.