Gallium Arsenide (composition format:GaAs),is mainly used as semiconductor device material.

Compared with silicon,GaAs has the disadvantage of high-price and difficult to process etc however due to the high motion fuction and approx 1/3 of consumed electricity therefore it's easier to be downsized.

In recent years,thanks to the development of processing technology,GaAs device can also be provided at a lower price,which is widely used in applications mainly require a small size and high frequency property such like mobile phone,and LED application,laser application.

Gallium Antimondide (GaSb) is a single crystal grown by special LEC method,used in infrared detector,LED,laser,transistor and thermostat photovoltaic system etc.

As typified by GaSb, III-V group compound semicoductors are direct transition semiconductor,the bandgap of which is smaller than Si semiconductor, it can also tranfer the electromagnetic wave (length of 0.8um ~2.2um) in near-infrared area to electricity.

Technically,solar cell based on GaSb is very difficult however research on II-VI group epi by MBE to GaSb substrate is now under study.

InSb (Indium Antimonide) is a III-V group single crystal compound material with zincblende structure.

InSb is a direct transition semiconductor with a narrow bandgap of 0.17eV (room temperature),mainly used as infrared detector element for infrared thermographic,thermal imaging camera and homing missile;hall element and magnetoresistance effect element etc.