Compound Wafer Product Lineup
AlN
- AIN (aluminum nitride) single crystal substrate is expected as high efficiency, high frenquency electronical device and deep ultraviolet emitting element.
By using AIN substrate, homoepitaxial growth can be done and defect density of nitride crystal deposition can be controled at a low level.
Now, nitride semiconductor substrate like sapphire, is used as substrate material for ultraviolet emission element. It's obvious that AIN is one of the best substrates from the view of lattice mismatch and ultraviolet light penetrative power.
However it's difficult to produce AIN single crystal substrate from melt liquid since the melt point is high therefore disassociation voltage will be high as well. - Features
- We started handling of bulk Alminium Nitride substrate which is used as advanced materials for R&D of laser(blue to ultraviolet) and power electronic device since 2006.
[Application]
UV LED/LD, avalanche PD, sensor, power electronic device, heatsink etc.
[Growth]
Physical Vapor Transport (PVT)
Sublimation/Seeded-recrystallization of AlN powder
| Item | Description |
|---|---|
| Diameter | 22.5～50mm |
| Thickness | 500±50um |
| Orientation | (0001)±1.0° |
| Finishing | Al face：CMP (RMS <0.8nm)
N face：optical (RMS <3nm) |
| Absorbing coefficient | <30cm-1 |
| XRD | FWHM (002)：<0.3°
FWHM (102)：<0.5° |
| EPD | <106cm-2 |
| Effective area | >80% |
| Exclude edge area | 1.0mm |
GaP
- GaP (Gallium Phosphide) is a orange-yellow semi-translucent material, which is made by direct reaction of galliium and phosphide or reaction by oxide gallium and phosphide at temperature of 900~1000C.
Specific gravity is 4.13,melt point is 1465C, dielectric constant is 9.1,energy range is 2.2eV. GaP has the semiconductor charecteristics as other III-V compounds materials therefore can be used for display elements of various visible light emmition diode as well as illumination (yellow and green) of mobile phone. - Features
- We offer 2inch and 3inch GaP wafer.
【Application】
Opto device : Visible LED such as display element(red,green) and backlight of LCD(yellow, green) etc.
【Growth】
Liquid Encapsulated Czochralski (LEC)
| Item | Description |
|---|---|
| Type/Dopant | N-type/S,Si,P-type/Zn *Un-doped also available |
| Diameter | 2inch ~ 3inch |
| Orientation | (100), (111), (110) For other orientation and off-orientation,please ask us. |
| Finishing | Single side mirror polished, Double sides mirror polished, as-cut |
| Thickness | 250-1000um |
| Career concentration | (1-10)E18cm-3 |
| EPD | <1E5cm-2 |
Al2O3(Sapphire)
- Aluminium Oxide (Al2O3) is a amphoteric oxide of aluminium.
Usually it's called Alumina, it's naturally produced by corundum, ruby and sapphire,maily used as raw material of metal aluminium.Besides,it can also be used as polishing powder with the nature of its degree of hardness,infractory material with the nature its high melt point.
Sapphire single crystal for seimiconductor use is made by CZ,Kyropoulos and EFG methods. Sapphire wafer is used as LED substrate and laser substrate for optical device.
Furthermore,sapphire wafer is also used as window material to show high transmissivity in a wide frequency range from ultraviolet area to infrared area. - Features
- Sapphire is a material which has good crystal characteristics and low-dielectric constant We can offer 2”,3”,4” epi-ready substrate and custom requirements such as off-orientation,both sides polished,thickness etc are also acceptable.
【Application】
LED, Substrate for GaN
| Item | Description |
|---|---|
| Diameter | 2inch ~ 4inch |
| Orientation | C(0001)0.2off±0.1°to m-axis |
| OF direction | (11-20)±0.3° |
| OF length | 2inch：16±0.5mm, 4inch：30±1.0mm |
| Thickness | 2inch：430um, 4inch：650um |
| Finishing | One side epi polished |
| Bow | ≦10um (2inch) |
| TTV | ≦10um (2inch) |
SiC
- Silicon Carbide (SiC) is made by Carbon and Silicon,which has a strong convalent characteristic with a three times bandgap 3.2eV compared with Silicon.
Heat-transfer of SiC is high, It's also good at both radiation and heat-resistant thus the characteristics of SiC is well over silicon.
SiC is expected to be a material which can reduce electricity loss significantly and acheive high-efficiency and save energy, used in the area of automotive (hybrid,electronic),white product (air conditioner,solar cell etc),electricity and information communications. - Feature
- We supply SiC wafer from 2inch" to 4inch" for vatious applications.
*SiC epi wafer is also available.
GaN
- Gallium Nitride (GaN) is widely used as substrate mainly for light-emmiting diode (blue color LED,violet color LED, ultraviolet LED and white color LED) and blue-violet color laser diode for blue ray.
Conventionally, most of GaN substrates have been made on sapphire substrate however nowadays GaN is required to meet LD and high brightness LED requirements which takes high output and durability as important factors.Product research activity on selt-reliable substrate with a nature of less occurrance of crystal defect is getting more and more active. - Feature
- We supply high quality GaN bulk substrate for LED,LD and device applications.(Size:~2inch)
*GaN Epi wafer is also available
Ge
- Germanium (Ge) has a narrower bandgap (approx 0.7eV) compared with silicon, transistor in the earlier stages used Germanium mainly until much more stable silicon hit the market.
Even in modern days,Germanium is still used for diode due to the voltage dropping is low and used for light detecting application due to its bandgap is comparable narrow.
Besides, Germanium is also used for gamma radiation detector,infrared optical application and solar cell etc. - Feature
- We supply 2inch ~ 4inch Germanium wafer for applications such like infrared,solar cell and detector.
Oxide
- Most of oxide semiconductors have a wide bandgap which is transmmisive for electromagnetic wave of visual light range.
Some of them show high charge carrier concentration and mobility, depend on characteristics those can be used in variety applications (such like transparent conducting film,superconductivity and sensors).
Representative examples of oxide single crystal substrate used as superconductivity thin film substrate are SrTiO3 single crystal substrate and MgO single crystal substrate. - Feature
- We supply various oxide single crystal wafer such like MgO,SrTiO3 and ZnO etc.
II-VI Compounds Wafer
- II-VI group semiconductor is made by II group elements and VI group elements. Magnesium, Zinc, Cadmium and Hydrargyrum from II group and,Oxygen,Sulfur,Tellurium and Selenium from VI group are popularly used elements.
Compounds combined by these elements such as ZnO,CdTe,ZnSe and ZnS.
II-VI group semiconductor has many features like strong ion crystalline,hard but many of them are fragile,however bandgap can be greatly changed by changing the composion.
The material which has a bandgap correspond to visible light and infrared area can be used as material for light emmiting and receiving. - Product
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- CdSe
- CdS
- ZnSe
- ZnTe
- ZnS